E-mode HEMT
Taiwan Semiconductor introduces 650V Enhancement Mode GaN Transistors which are packaged in thermally efficient PDFN packages with small 5×6 & 8×8 mm footprint. These GaN Transistor products meet today’s high-power system requirements to achieve higher operating currents, higher efficiency, and smaller size and weight. The transistors, developed specifically for industrial, and renewable energy industries, feature the highest current GaN in production.
Key Features
- True Enhancement mode
- Best FOM and performance
- No reverse recovery loss
- Easy to parallel
Common with Si MOSFET
- True enhancement-mode: Normally off
- Voltage driven
- Easy slew rate control by external RG
- Compatible with Si MOSEFT gate driver chip
Applications
- SMPS, Chargers
- DC/DC converter
- Server / Telecom / Data center
- Inverters
- Renewable Energy
Differences with Si MOSFET
- Lower QG: Lower drive loss / faster switching
- Higher gain and lower VGS (+5V ~ 6V) to turn on
- Lower VGS(th): 1.5V (typ.)
Product Portfolio
| Package | Part Number | VDS (V) | VGS (V) | VGS(TH) (V) | ID (A) | RDS(ON) Typ. (mΩ) | RDS(ON) Max. (mΩ) | Qg. (nC) | Qoss (nC) | Qrr (nC) |
| PDFN88 | TSG65N068CE | 650 | -10 / +7 | 1.1~ 2.6 | 30 | 50 | 68 | 6.7 | 61 | 0 |
| PDFN88 | TSG65N068CE | 650 | -10 / +7 | 1.1~ 2.6 | 18 | 78 | 110 | 4 | 37 | 0 |
| PDFN88 | TSG65N195CE | 650 | -10 / +7 | 1.1~ 2.6 | 11 | 150 | 195 | 2.2 | 19 | 0 |
| PDFN56 | TSG65N190CR | 650 | -10 / +7 | 1.1~ 2.6 | 11 | 150 | 195 | 2.2 | 19 | 0 |
* Max Tj =150°C
Simple-driven for E-mode HEMT
- Most Popular Solutions
Gate Drivers for GaN device: ADuM4121ARIZ/ ACPL-P346/ NCP51820/ Si8271/ Si8273/ 4/ 5.
- Si MOS Driver Circuit Modification
The driving voltage for Si MOSFET is usually 10V to 12V. It’s easy to shift the voltage level to 6V for GaN Transistor by add 4 extra R, C, ZD components.
| Gate Bias Level | Gate Bias Level | Si MOSFET | |
| Maximum rating | TSG65N068CE | -20V / +20V | |
| Typical value | Off | TSG65N068CE | 0V |
| On | TSG65N195CE | +10V ~ 12V | |
Recommend Value
| Symbol | Value | Footprint | Function | TSC product |
| R3 | ~ 10 kΩ | 0402 / 0603 | Keep the driving voltage | |
| C1 | ~ 47 nF | 0402 / 0603 | Hold negative voltage for turning off | |
| ZD1 | 5.6V Zener | SOD923F / 0603 | Clamp the positive gate voltage | TSZU52C5V6 |
| ZD2 | 9.1V Zener | SOD923F / 0603 | Clamp the negative gate voltage | TSZU52C9V1 |
Newsletter_3_2023_GaN_Transistor_650V